With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...

Discover how Penn State’s 2D CMOS computer breakthrough paves the way for ultra-efficient, atomic-scale electronics beyond silicon.

Gaze into the temporal distance and you might spot the end of the age of silicon looming somewhere out there, as a research team at Penn State University claims to have built the first working CMOS ...

Multicationic oxide semiconductors are receiving considerable interest in electronic and optoelectronic devices owing to their tunability of physical properties by the cation compositions. Here, we ...

The recently developed logic-in-memory offers a high-performance and energy-efficient paradigm based on crossbar arrays of emerging non-volatile devices. However, the low resistance of ...

In this paper, a key-controlled hybrid spin-CMOS polymorphic logic gate using a novel 5 terminal magnetic domain wall motion device is proposed. The proposed hybrid polymorphic gate is able to perform ...